inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1378 description drain current C i d =10a@ t c =25 drain source voltage- : v dss =400v(min) fast switching speed applications designed for high voltage, high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 400 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 10 a p tot total dissipation@tc=25 125 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.77 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1378 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 0.25ma 400 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =0.25ma 2.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =5a 0.35 0.55 i gss gate source leakage current v gs = 25v;v ds = 0 100 na i dss zero gate voltage drain current v ds =400v; v gs = 0 250 ua tr rise time v gs =10v;i d =10a;r l =20 16 ns ton turn-on time 40 ns tf fall time 14 ns toff turn-off time 80 ns pdf pdffactory pro www.fineprint.cn
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